ISSN   1004-0595

CN  62-1224/O4

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Si3N4陶瓷电化学研磨特性及机理分析[J]. 摩擦学学报, 2004, 24(4): 360-363.
引用本文: Si3N4陶瓷电化学研磨特性及机理分析[J]. 摩擦学学报, 2004, 24(4): 360-363.
Study on Characteristics and Mechanism of Silicon Nitride in Electrochemical Grinding[J]. TRIBOLOGY, 2004, 24(4): 360-363.
Citation: Study on Characteristics and Mechanism of Silicon Nitride in Electrochemical Grinding[J]. TRIBOLOGY, 2004, 24(4): 360-363.

Si3N4陶瓷电化学研磨特性及机理分析

Study on Characteristics and Mechanism of Silicon Nitride in Electrochemical Grinding

  • 摘要: 采用自制的全程方向渐变型恒速平面研磨试验机考察了Si3N4陶瓷球在水基介质润滑下同灰铸铁HT250和45#钢配副时的电化学研磨特性,分析了外加电压对摩擦磨损性能的影响机理;并采用扫描电子显微镜和原子力显微镜分析了外加电压极性对Si3N4陶瓷球摩擦磨损性能的影响.结果表明,对金属盘施加正向电压导致Si3N4陶瓷球磨痕明显增大,而摩擦系数基本保持不变;施加反向电压则可使摩擦系数及Si3N4磨痕明显减小;在对比分析基础上筛选得到了兼具较高研磨效率和良好研磨表面质量的优化研磨方案,可用于Si3N4陶瓷高效研磨.

     

    Abstract: A plane grinding tester capable of all-the-journey gradually-changing-direction at constant velocity was performed to investigate the tribological characteristics of Si_3N_4 ball ground by cast iron HT250 or AISI-1045 steel in a ball-on-disc configuration, in the presence of an aqueous medium and external electric potential. The ground surface of the Si_3N_4 ball was analyzed by means of SEM and AFM to explore the effect of the external voltage polarities in the auxiliary electrode mode on the wear scar size and ground surface quality of the Si_3N_4 ball. It was found that the polarity of the externally applied voltage had a significant effect on the tribological characteristics of the ceramic ball. The positive voltage applied on the metallic disc led to a significant increase in the wear of the Si_3N_4, while the friction coefficient remained unchanged or increased slightly. Contrary to the above, the negative voltage applied on the metallic disc caused a significant decrease in both the friction coefficient and the wear rate. The effect of external potential on the wear mechanism of the Si_3N_4 ball was analyzed. It was suggested to select the AISI-1045 steel disc as the counterpart and to apply a positive external voltage, so as to obtain a higher polishing efficiency and better polishing quality of Si_3N_4 ceramic.

     

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